Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas
Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas
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DOI：
10.7567/jjap.54.065501
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发表时间：
2015-04
影响因子：
1.5
通讯作者：
T. Sumi;Yuuki Taniyama;H. Takatsu;Masami Juta;A. Kitamoto;M. Imade;M. Yoshimura;M. Isemura;Y. Mori
中科院分区：
文献类型：
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作者：
T. Sumi;Yuuki Taniyama;H. Takatsu;Masami Juta;A. Kitamoto;M. Imade;M. Yoshimura;M. Isemura;Y. Mori
利用Ga2O蒸气和NH3气体在高温下的反应生长了高质量的a面GaN层。在厚c面GaN晶体切片的a面GaN种子衬底上获得了光滑的a面GaN外延层。生长速率随Ga2O分压的增加而增加。获得了a面GaN层，生长速率为48µm/h。X射线摇摆曲线(XRC)测量表明，GaN入射光束平行于[0001]方向和垂直于[0001]方向的半高宽(FWHM)分别为29-43和29-42弧秒。二次离子质谱仪(SIMS)测量表明，随着温度的升高，氧浓度降低。这些结果表明，使用Ga2O蒸气和NH3气体在高温下生长a-GaN层可以产生高质量的晶体。
Growth of high-quality a-plane GaN layers was performed by reaction between Ga2O vapor and NH3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga2O partial pressure. An a-plane GaN layer with a growth rate of 48 µm/h was obtained. The X-ray rocking curve (XRC) measurement showed that the full widths at half maximum (FWHMs) of GaN with the incident beam parallel and perpendicular to the [0001] direction were 29–43 and 29–42 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement revealed that oxygen concentration decreased at a high temperature. These results suggest that growth of a-GaN layers using Ga2O vapor and NH3 gas at a high temperature enables the generation of high-quality crystals.