Observation of Ga antisite defect in electron‐irradiated semi‐insulating GaAs by photoluminescence
Observation of Ga antisite defect in electron‐irradiated semi‐insulating GaAs by photoluminescence
复制标题
光致发光观察电子辐照半绝缘GaAs中Ga反位缺陷
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
Hirokazu Takahashi
中科院分区：
文献类型：
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作者：
K. Kuriyama;K. Yokoyama;K. Tomizawa;T. Takeuchi;Hirokazu Takahashi
利用光致发光（PL）方法研究了30 MeV电子辐照半绝缘GaAs产生的阳离子反位缺陷。在600 °C退火的样品中，在860和935 nm处观察到与双受主GaAs相关的PL发射，位于价带以上78和200 meV处。前者的发射是一个突出的光谱，其声子副本在880 nm，而后者被埋在广泛的发射组成的缺陷复合物，如VA-CAs复合物。电子辐照引起的GaAs缺陷比中子辐照半绝缘GaAs中产生的缺陷小102倍。
Cation antisite defects produced in semi‐insulating GaAs by 30‐MeV electron irradiation were studied using a photoluminescence (PL) method. PL emissions associated with a double acceptor GaAs, lying at 78 and 200 meV above the valence band, were observed at 860 and 935 nm in 600 °C annealed samples. The former emission is a prominent spectrum with its phonon replica at 880 nm, whereas the latter is buried in broad emissions consisting of the defect complexes such as the VAs‐CAs complex. The electron irradiation‐induced GaAs defects are ∼102 times smaller than those produced in neutron irradiated semi‐insulating GaAs.