Cotunneling of holes in silicon-based structures.
Cotunneling of holes in silicon-based structures.
复制标题
硅基结构中的孔洞掘进。
DOI：
10.1103/physrevb.49.16514
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Whall
中科院分区：
文献类型：
--
作者：
Paul;Cleaver;Ahmed;Whall
在低于库仑阻塞阈值的偏压下，研究了δ掺杂硅锗双隧道结系统中空穴的非弹性共隧穿.非弹性，线性，有限温度cotunneling长期占主导地位的较低的电压，而零温度，立方cotunneling长期占主导地位的温度高于4.2 K的库仑阻塞阈值以下的较高电压。
Inelastic cotunneling of holes through double-tunnel-junction systems fabricated in δ-doped silicon-germanium layers was studied for bias voltages below the Coulomb blockade threshold. The inelastic, linear, finite-temperature cotunneling term dominates for lower voltages while the zero-temperature, cubic cotunneling term dominates for higher voltages below the Coulomb blockade threshold for temperatures above 4.2 K.