Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP (001) by Organometallic Vapor Phase Epitaxy
Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP (001) by Organometallic Vapor Phase Epitaxy
复制标题
GaP 盖层生长对有机金属气相外延在 GaP (001) 上生长的自组装 InAs 岛的影响
DOI：
10.1143/jjap.39.3290
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发表时间：
2000
影响因子：
1.5
通讯作者：
Y. Takeda
中科院分区：
文献类型：
--
作者：
S. Fuchi;Y. Nonogaki;Hiromitsu Moriya;Y. Fujiwara;Y. Takeda
我们采用低压金属有机气相外延(LP-OMVPE)方法，采用不同的生长顺序制备了GaP/InAs岛/GaP结构。用横截面透射电子显微镜研究了生长顺序对埋入InAs岛和GaP盖层的影响。两步生长顺序对于GaP盖层的生长是有效的，其中第一GaP层在与InAs岛相同的温度下生长，第二GaP层在优化的GaP生长温度下连续生长。该生长序列产生了高质量的GaP/InAs岛/GaP结构，具有小的InAs岛(宽15 nm，高5 nm)和高质量的GaP盖层。GaP盖层液滴异质外延用于控制InAs埋岛尺寸是可行的。
We have fabricated GaP/InAs islands/GaP structures using various growth sequences for the GaP cap layer, by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). The effects of the growth sequences on the buried InAs islands and the GaP cap layers have been investigated by cross-sectional transmission electron microscopy (TEM). The two-step growth sequence is effective for the growth of GaP cap layers, whereby the first GaP layer is grown at the same temperature as InAs islands and the second GaP layer is successively grown at the optimized growth temperature of GaP. The growth sequence yields good-quality GaP/InAs islands/GaP structures with small InAs islands (15 nm in width and 5 nm in height) and a high-quality GaP cap layer. Droplet heteroepitaxy of GaP cap layers is feasible for the control of the size of buried InAs islands.