Global and Local Oxidation Behavior of Reduced Graphene Oxide
Global and Local Oxidation Behavior of Reduced Graphene Oxide
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DOI:
10.1021/jp2003744
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发表时间:
2011-04
影响因子:
3.7
通讯作者:
P. Solís-Fernández;J. I. Paredes;S. Villar-Rodil;L. Guardia;M. J. Fernández-Merino;G. Dobrik;L. Biró;A. Martínez-Alonso;J. Tascón
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文献类型:
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作者:
P. Solís-Fernández;J. I. Paredes;S. Villar-Rodil;L. Guardia;M. J. Fernández-Merino;G. Dobrik;L. Biró;A. Martínez-Alonso;J. Tascón
The oxidation and etching of reduced graphene oxide (RGO) by thermal oxidation in air, microwave oxygen plasma, ultraviolet-generated ozone, and scanning tunneling microscopy (STM) lithography have been investigated. This type of graphene exhibited a higher reactivity toward oxidation than that of pristine graphite (taken as a reference carbon material), which could be related to its intrinsically defective structure. Etching of RGO as a result of thermal oxidation in air was started at as low a temperature as 400 °C, as compared to ∼500 °C for graphite, indicating that the defects present on the former are different in nature from those found on the surface of pristine graphite. The morphological evolution of individual RGO sheets upon oxidative attack was consistent with the sheets being essentially a patchwork of minute domains (a few to several nanometers large) with two distinct reactivities, higher (lower) reactivity associated with defective (defect-free) domains. The introduction of oxygen functio...