Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties
Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties
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DOI：
10.1109/jphotov.2019.2924389
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发表时间：
2019-09-01
影响因子：
3
通讯作者：
Ballif, Christophe
中科院分区：
文献类型：
--
作者：
Haschke, Jan;Lernerle, Raphael;Ballif, Christophe
在本文中，我们报告了硅异质结太阳电池性能的演变，特别是在连续热退火后的铟锡氧化物(ITO)层。我们发现，ITO的载流子密度N-e随着热预算的增加而增加，而载流子迁移率保持不变。对于太阳电池而言，由于ITO方块电阻的降低，其在最大功率点R-S(MPP)处的串联电阻首先减小。随着进一步的退火，R-S(Mpp)再次增加。由于所有被监测的R-S分量都减少了，我们将其归因于接触电阻的增加。对于我们的层，隐含的V-OC和隐含的填充因子在高于190摄氏度的温度下都略有下降。在优化所需的热预算时，必须仔细考虑这一点以及ITO的N-e的变化，例如，对于溅射损伤或丝网印刷糊料固化。
In this paper, we report the evolution of silicon heterojunction solar cell properties focusing, in particular, on the indium tin oxide (ITO) layers upon consecutive thermal annealing. We find that the charge carrier density N-e of the ITO increases with higher thermal budget, while the carrier mobility remains constant. For the solar cells, their series resistance at the maximum power point R-S(MPP) first decreases due to the reduction of the ITO's sheet resistance. With further annealing, R-S(MPP) increases again. As all monitored R-S components decrease, we attribute this to an increase of the contact resistance. The implied V-OC and the implied fill factor both slightly degrade for annealing temperatures above 190 degrees C for our layers. This, as well as the change in N-e of the ITO, must be carefully considered when optimizing the thermal budget needed, e.g., for sputter damage or screen-printing paste curing.