Etching characteristics of local wet etching of silicon in HF/HNO3 mixtures
Etching characteristics of local wet etching of silicon in HF/HNO3 mixtures
复制标题
DOI：
10.1002/sia.2838
复制
发表时间：
2008-06
影响因子：
1.7
通讯作者：
K. Yamamura;T. Mitani
中科院分区：
文献类型：
--
作者：
K. Yamamura;T. Mitani
绝缘体上硅（SOI）晶片是实现高速和低功耗电子器件的有前途的半导体材料。下一代所要求的SOI厚度和偏差分别为13-15 nm和± 5%。然而，这是非常困难的，以实现这些规格，通过应用传统的机械加工，因为塑性变形和脆性断裂的机械去除机制不可避免地会导致亚表面损伤，如位错，空位，或微裂纹。此外，由于接触去除机制，加工精度会受到外部干扰的强烈影响，例如工件和机床的振动或热变形。为了解决这些问题，我们开发了数控局部湿法蚀刻（NC‐LWE）作为一种新的确定性子孔径成形和精加工方法，该方法利用蚀刻剂和工件表面之间的局部化学反应。研究了硅在HF/HNO 3混合液中的局部湿法腐蚀特性，发现在扫描腐蚀液供给喷嘴的情况下，存在一个诱导期。版权所有© 2008约翰威利父子有限公司。
Silicon‐on‐insulator (SOI) wafers are promising semiconductor material to realize high speed and low power consumption electric devices. The thickness and deviation of SOI, which are required in the next generation, are 13–15 nm and ± 5%, respectively. However, it is very difficult to achieve those specifications by applying conventional machining, because plastic deformation and brittle fracture in mechanical removal mechanisms inevitably cause subsurface damage such as dislocations, vacancies, or microcracks. Moreover, the accuracy of machining is strongly affected by external disturbances, such as the vibration or thermal deformation of the workpiece and the machine, because of the contact‐removal mechanism. To solve these issues, we had developed numerically controlled local wet etching (NC‐LWE) as a novel deterministic subaperture figuring and finishing method, which utilizes localized chemical reaction between the etchant and the surface of the workpiece. We investigated the etching characteristics of local wet etching of silicon in HF/HNO3 mixtures, and it was found that there was an induction period in the case of scanning the etchant supply nozzle. Copyright © 2008 John Wiley & Sons, Ltd.