Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities
Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities
复制标题
位于 GaAs/AlGaAs 量子阱不均匀性处的激子的锐线光致发光
DOI：
10.1063/1.111265
复制
发表时间：
1994
影响因子：
4
通讯作者：
G. Weimann
中科院分区：
文献类型：
--
作者：
K. Brunner;G. Abstreiter;G. Böhm;G. Tränkle;G. Weimann
本文报道了GaAs/AlGaAs单量子阱样品的低温光致发光谱研究。通过分子束外延在界面处生长中断而制造的薄量子威尔斯揭示了在主发光的低能量侧具有低于0.1 meV的光谱宽度的强光致发光线。通过扫描探针映射量子阱显示了这些尖锐线的局部发射，这些尖锐线的数量和能量随着横向探针位置而变化。尖锐线的局部来源以及它们的温度和饱和行为表明，它们是由位于样品不均匀性处的单激子引起的，如GaAs阱宽波动。
GaAs/AlGaAs single quantum well samples have been investigated by photoluminescence spectroscopy using a probe size of about a micron at low temperature. Thin quantum wells fabricated by molecular beam epitaxy with growth interruptions at the interfaces reveal intense photoluminescence lines with spectral widths below 0.1 meV at the low‐energy side of the main luminescence. Mapping the quantum well by scanning the probe shows local emission of these sharp lines, which change in number and in energy with lateral probe position. The local source of the sharp lines, as well as their temperature and saturation behavior shows that they are caused by single excitons localized at sample inhomogeneities, like GaAs well width fluctuations.