Nonlinearity reduction in silicon resonators by doping and re-orientation
Nonlinearity reduction in silicon resonators by doping and re-orientation
复制标题
通过掺杂和重新取向减少硅谐振器的非线性
DOI：
--
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
R. Abdolvand
中科院分区：
文献类型：
--
作者：
M. Shahmohammadi;H. Fatemi;R. Abdolvand
本文首次证明了n型掺杂硅微谐振腔的非线性可以通过改变掺杂浓度和谐振腔排列到不同的晶体取向来降低。在高磷掺杂（n~5×1019 cm-3）硅衬底上制作的拉伸谐振器中，弹簧硬化的趋势与通常观察到的弹簧软化相反，并在[100]方向取向。因此，假设对于特定水平的掺杂浓度，非线性刚度系数（k1和k2）可以被取消，并且器件将在大范围的输入功率下表现为线性。观察到，在低掺杂浓度（n~3×1019 cm-3）的砷掺杂衬底上制备的器件在达到分岔之前机械失效，初步证明了我们的假设。
In this paper, it is shown for the first time that nonlinearity in n-type doped silicon micro-resonators can be reduced by modifying the doping concentration and the resonator alignment to a different crystalline orientation. Spring hardening, a trend opposite to the commonly-observed spring softening, is demonstrated in extensional resonators fabricated on a highly Phosphorus-doped (n~5×1019 cm-3) silicon substrate and oriented in the [100] direction. Therefore, it is hypothesized that for a specific level of doping concentration the nonlinear stiffness coefficients (k1 and k2) can be cancelled and the device will behave linearly for a large range of input power. It is observed that devices fabricated on an Arsenic-doped substrate with lower doping concentration (n~3×1019 cm-3) mechanically fail before they reach bifurcation, a preliminary proof for our hypothesis.