Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
复制标题
Si(001)初始热氧化物的局部有序化和横向生长
DOI：
10.1143/jjap.33.375
复制
发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Masaaki Niwa Sumita
中科院分区：
文献类型：
--
作者：
M. Udagawa;Masaaki Niwa Sumita
用扫描隧道显微镜（STM）研究了Si（001）清洁表面热氧化（600° C）生长的初始阶段。氧化物生长从台阶边缘和平台开始。在120 L时，几乎整个表面都被氧化物覆盖。仍然可以识别台阶，并且在该O2暴露下表观粗糙度具有局部最小值。这些结果表明，第一层被非常均匀地氧化。在台阶上观察到初始氧化物的一些局部有序化，这可能会增强氧化物在横向（平行于表面）方向上的生长。
The initial stages of the thermal (600° C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.