Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer
Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer
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DOI：
10.1063/1.4959144
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发表时间：
2016-07-18
影响因子：
4
通讯作者：
Hono, K.
中科院分区：
文献类型：
--
作者：
Kasai, S.;Takahashi, Y. K.;Hono, K.
研究了以Co_2Fe（Ga_（0.5）Ge_（0.5））Heusler合金为铁磁电极，Cu（In_（0.8）Ga_（0.2））Se-2（CIGS）半导体为间隔层的磁性结的结构和磁输运性质.由于CIGS间隔物的半导体性质，对于0.3和3 Ω μ m（2）之间的低电阻面积积（RA）值，获得了在室温下40%和在8 K下100%的大磁阻（MR）比。透射电子显微镜观察证实了黄铜矿CIGS层的完全外延生长，和RA的温度依赖性表明，大的MR是由于自旋相关隧穿。由AIP出版社出版。
We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se-2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Omega mu m(2). Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling. Published by AIP Publishing.