Anisotropy in the electronic structure of polysilanes investigated by synchrotron-radiation spectroscopy.
Anisotropy in the electronic structure of polysilanes investigated by synchrotron-radiation spectroscopy.
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通过同步辐射光谱研究聚硅烷电子结构的各向异性。
DOI：
10.1103/physrevb.44.5487
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
Tokura
中科院分区：
文献类型：
--
作者：
Tachibana;Kawabata;Koshihara;Arima;Moritomo;Tokura
使用高度取向的聚（二己基硅烷）薄膜，偏振吸收光谱测量通过同步辐射的能量范围为2-10 eV的Si骨架结构的反式平面构象。在8 eV以下观察到平行或垂直于聚合物主链偏振的吸收带，根据理论电子能带结构将其解释为σ电子相关跃迁或相关激子态。利用热诱导的主链结构从有序的trans-planar到无序的含gauche的形式的变化，还研究了Si链中电子结构的构象依赖性，这清楚地表明构象变化降低了σ-电子态的离域程度。
Using highly oriented films of poly (dihexylsilane), polarized absorption spectra were measured by means of synchrotron radiation in the energy range of 2–10 eV for the trans-planar conformation of Si-backbone structures. The absorption bands polarized parallel or perpendicular to the polymer backbones were observed below 8 eV, which have been interpreted as the σ-electron-related transitions or associated exciton states on the basis of theoretical electronic band structures. Taking advantage of the thermally induced change of the backbone structure from the ordered trans-planar to the disordered gauche-containing form, the conformation dependence of the electronic structures in Si chains was also investigated, which clearly demonstrates a reduced degree of delocalization of σ-electron states upon the conformation change.