Subnanometer Linewidth Uniformity in Silicon Nanophotonic Waveguide Devices Using CMOS Fabrication Technology
Subnanometer Linewidth Uniformity in Silicon Nanophotonic Waveguide Devices Using CMOS Fabrication Technology
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DOI：
10.1109/jstqe.2009.2026550
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发表时间：
2010-01-01
影响因子：
4.9
通讯作者：
Baets, Roel
中科院分区：
文献类型：
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作者：
Selvaraja, Shankar Kumar;Bogaerts, Wim;Baets, Roel
我们报告了使用大批量 CMOS 制造工具制造的硅纳米光子器件的亚纳米线宽均匀性。我们使用环形谐振器、马赫曾德干涉仪和阵列波导光栅等波长选择设备来评估芯片内部和芯片之间的设备不均匀性。该器件采用 193 或 248 nm 光学光刻和绝缘体上硅晶圆技术干法蚀刻制造。使用 193 nm 光学光刻，我们在 200 mm 晶圆上实现了 2 nm（光刻后）和 2.6 nm（干法蚀刻后）的线宽均匀性。此外，通过使用波长选择器件开发的制造工艺，我们已经证明了芯片内线宽控制优于 0.6 nm，芯片间线宽控制优于 2 nm。通过比较 248 和 193 nm 光学光刻工艺之间的器件不均匀性，证明了高分辨率光学光刻的必要性。
We report subnanometer linewidth uniformity in silicon nanophotonics devices fabricated using high-volume CMOS fabrication tools. We use wavelength-selective devices such as ring resonators, Mach-Zehnder interferometers, and arrayed waveguide gratings to assess the device nonuniformity within and between chips. The devices were fabricated using 193 or 248 nm optical lithography and dry etching in silicon-on-insulator wafer technology. Using 193 nm optical lithography, we have achieved a linewidth uniformity of 2 nm (after lithography) and 2.6 nm (after dry etch) over 200 mm wafer. Furthermore, with the developed fabrication process, using wavelength-selective devices, we have demonstrated a linewidth control better than 0.6 nm within chip and better than 2 nm chip-to-chip. The necessity for high-resolution optical lithography is demonstrated by comparing device nonuniformity between the 248 and 193 nm optical lithography processes.