Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral
Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral
复制标题
DOI：
10.1109/ted.2012.2207961
复制
发表时间：
2012-10-01
影响因子：
3.1
通讯作者：
Chen, Xingbi
中科院分区：
文献类型：
--
作者：
Huang, Haimeng;Chen, Xingbi
基于平衡对称超结（SJ）MOSFET的二维电场分布解析模型，提出了一个击穿电压模型，并用来解释不同击穿机制随列掺杂浓度和宽度的变化。观察到当漂移区未完全耗尽时，击穿沿沿着不同的电场线同时发生在一些特殊的对称点上。此外，当沿这些电场线的电离积分沿着都为1时，可以获得最小的比导通电阻。对于大于600 V的击穿电压，SJ结构的最小比导通电阻R-on可以降低大于13%的“次优”的情况下相比，在以前的文献中。通过与仿真数据的比较表明，该近似解具有很好的精度。文中还讨论了击穿电压与电荷不平衡的关系以及瞬态特性。
A breakdown voltage model based on the 2-D analytical model of the electric field distributions for the balanced and symmetric superjunction (SJ) MOSFET is presented and used to explain the different breakdown mechanisms as a function of column doping concentrations and widths. It is observed that breakdowns simultaneously occur along different electric field lines across some special symmetric points when the drift region is not fully depleted. Moreover, the minimum specific on-resistance can be obtained when the ionization integrals along these electric field lines are both in unity. For a breakdown voltage larger than 600 V, the minimum specific on-resistance R-on of the SJ structure can be reduced by larger than 13% compared with the "suboptimum" case in the previous literature. Comparisons of results from the proposed model and simulation data show that the approximation solution exhibits excellent accuracy. The dependence values of the breakdown voltages on charge imbalance and the transient characteristics are also discussed.