Diode-Like Behavior Based on Conductive Domain Wall in LiNbO Ferroelectric Single-Crystal Thin Film
Diode-Like Behavior Based on Conductive Domain Wall in LiNbO Ferroelectric Single-Crystal Thin Film
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DOI：
10.1109/led.2022.3224915
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发表时间：
2023-01
影响因子：
4.9
通讯作者：
Liya Niu;Xiaojun Qiao;Hao Lu;Wenxiao Fu;Yukai Liu;Kaixi Bi;L. Mei;Yajun You;Xiu-jian Chou;Wenping Geng
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文献类型：
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作者：
Liya Niu;Xiaojun Qiao;Hao Lu;Wenxiao Fu;Yukai Liu;Kaixi Bi;L. Mei;Yajun You;Xiu-jian Chou;Wenping Geng
The ferroelectric diode is a promising candidate for memory, rectifier system, and logic devices. Conductive domain wall (CDW) is essential to ferroelectric diodes. A permanent CDW-based unipolar two-terminal ferroelectric diode-like cell with enhanced conductivity is demonstrated here. Through poling engineering on LiNbO3 ferroelectric single-crystal thin film, diode-like cells with much smaller size than conventional diode is created in significantly efficient way. Throughout 5880 h, the CDW has maintained consistent operation around $\mu \text{A}$ rather than pA. The ferroelectric diode-like cell is fatigue-resistant for 500 cycles and retains its conductivity for 2400 h. In addition, the conductivity of a diode-like cell has increased from 0.2 to $16 ~\mu \text{A}$ via charge injection and parallel connection of multiple cells. Finally, the “OR” logic gate is assembled using the cells. These ferroelectric cells can be used as a diode-like component in large-scale integrated circuits and have potential applications in nanoelectronic logic devices.
