Electrosynthesis of Bismuth Vanadate Photoelectrodes
Electrosynthesis of Bismuth Vanadate Photoelectrodes
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DOI：
10.1149/1.3322641
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发表时间：
2010-01-01
影响因子：
--
通讯作者：
Rajeshwar, Krishnan
中科院分区：
文献类型：
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作者：
Dall'Antonia, Luiz Henrique;de Tacconi, Norma R.;Rajeshwar, Krishnan
提出并论证了以铂为载体制备BiVO4薄膜的两步电合成方法。在第一步中，从酸性BiCl3介质中在衬底上电沉积一层铋薄膜。在第二步中，将该薄膜转移到含有(水解的)钒前驱体的介质中，阳极剥离以产生Bi3+。然后原位沉淀在衬底上生成BiVO4。用扫描电子显微镜、能量色散X射线分析和X射线光电子能谱对薄膜的形貌和表面/体相组成进行了分析。光电化学数据与原位形成的能带隙为2.14 eV的n型半导体薄膜一致。
A two-step electrosynthesis strategy was conceived and demonstrated for the preparation of BiVO4 films supported on Pt substrate. In the first step, a Bi film was electrodeposited on the substrate from an acidic BiCl3 medium. In the second step, this film, after transfer to a medium containing (hydrolyzed) vanadium precursor, was anodically stripped to generate Bi3+. In situ precipitation then yielded BiVO4 on the substrate. The film morphology and surface/bulk composition were probed by scanning electron microscopy, energy-dispersive X-ray analysis, and X-ray photoelectron spectroscopy. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films with an energy bandgap of 2.14 eV.