Broadening of noise spectra in semiconductors and the 1/f1.5 problem
Broadening of noise spectra in semiconductors and the 1/f1.5 problem
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半导体噪声谱的展宽和 1/f1.5 问题
DOI：
10.1088/0268-1242/10/8/013
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发表时间：
1995
影响因子：
1.9
通讯作者：
S. Rumyantsev
中科院分区：
文献类型：
--
作者：
N. Dyakonova;M. Levinshtein;J. W. Palmours;S. Rumyantsev
它已被证明，在GaAs和SiC的低频1/f1.5噪声，偶尔在Si中，存在于温度区域中的产生-复合（GR）噪声占主导地位，这是由于本地水平。1/f1.5噪声可以由能级加宽来解释，能级加宽不可避免地发生在任何真实的晶体中，作为结构或掺杂不均匀性和缺陷的结果。GR噪声模拟进行GaAs和SiC，考虑到加宽的效果。为了解释实验结果，必须考虑俘获截面σ n= σ 0 exp（-E1/kT）的指数能量依赖性和能量E1对能级位置E0的依赖性。模拟结果与实验结果吻合较好。
It has been shown that the low-frequency 1/f1.5 noise in GaAs and SiC, and occasionally in Si, exists in the temperature region where a generation-recombination (GR) noise predominates that is due to a local level. The 1/f1.5 noise can be accounted for by energy level broadening, which inevitably occurs in any real crystal as a result of structural or doping inhomogeneities and defects. GR noise simulations were performed for GaAs and SiC, taking into account the effect of broadening. It has been shown that, to explain the experimental results, consideration must be given to the exponential energy dependence of the capture cross section sigma n= sigma 0 exp(-E1/kT) and the dependence of the energy E1 on the level position E0. The simulated and experimental results are in good agreement.