Pulsed laser deposition of boron nitride thin films
Pulsed laser deposition of boron nitride thin films
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DOI：
10.1080/10420150701776522
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发表时间：
2008-01-01
影响因子：
1
通讯作者：
Santo, N.
中科院分区：
文献类型：
--
作者：
Acacia, N.;Fazio, E.;Santo, N.
拉曼光谱、TEM 和 AFM 测量证明了脉冲激光沉积 PLD BN 薄膜中存在六方氮化硼 (h-BN) 相。采用PLD技术沉积薄膜，固定激光注量值1.35 J cm(-2)，衬底温度T(s) = RT和T(s) = 600℃。研究了衬底温度对结构和形貌特性的影响。即使随着 Ts 的增加，氮含量降低并且金属硼相的普遍存在，所有生长的薄膜中始终保持 1:1 的化学计量。特别是，结果表明衬底温度对 h-BN 相没有影响。
The presence of a hexagonal boron nitride (h-BN) phase in pulsed laser deposition PLD BN thin films has been evidenced by Raman spectroscopy, TEM and AFM measurements. The films have been deposited by means of PLD technique, fixing the laser fluence value at 1.35 J cm(-2), at the substrate temperature T(s) = RT and T(s) = 600 degrees C. The effect of the substrate temperature on the structural and morphological properties was investigated. A 1:1 stoichiometry is always maintained in all the grown films even if, increasing Ts, the nitrogen content decreases and the prevalence of the metallic boron phase is evident. In particular, the results show that the substrate temperature has no influence on the h-BN phase.