Modification of Layer Structures of Superconducting Tunnel Junctions to Improve X-ray Energy Resolution

Modification of Layer Structures of Superconducting Tunnel Junctions to Improve X-ray Energy Resolution
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DOI:
10.1007/s10909-016-1488-x
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发表时间:
2016-01
影响因子:
2
通讯作者:
M. Ukibe;G. Fujii;S. Shiki;Y. Kitajima;M. Ohkubo
M. Ukibe;G. Fujii;S. Shiki;Y. Kitajima;M. Ohkubo
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
M. Ukibe;G. Fujii;S. Shiki;Y. Kitajima;M. Ohkubo

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对 Nb/Al 基超导隧道结 (STJ) X 射线探测器的层结构进行了修改,通过抑制电极中激发的准粒子的复合来提高 STJ X 射线探测器的能量分辨率 ()。制作了具有 Nb (300 nm)/Al-Al2O(70 nm)/Al (70 nm)/Nb (300 nm) 对称层结构的 100100m STJ 的 100 像素阵列。 100 个像素的制造良率超过 90%。 STJ阵列的平均漏电流为8nA。对于 400 eV X 射线,STJ 阵列的平均值为 6.71.0 eV。这是 Nb/Al STJ 报告的最佳值。
The layer structure of a Nb/Al-based superconducting tunnel junction (STJ) X-ray detector was modified to improve the energy resolution () of STJ X-ray detectors by suppressing the recombination of excited quasiparticles in the electrodes. A 100-pixel array of 100100m STJs with a symmetric layer structure of Nb (300 nm)/Al-AlO(70 nm)/Al (70 nm)/Nb (300 nm) was fabricated. Fabrication yields of the 100 pixels were more than 90 %. The average leak current of the STJ array was 8 nA. The meanof the STJ array was 6.71.0 eV for 400 eV X-rays. Thisis the best value reported for Nb/Al STJs.