Temperature dependence of persistent phosphorescence in Eu2+-doped Ba3SiO5
Temperature dependence of persistent phosphorescence in Eu2+-doped Ba3SiO5
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DOI：
10.1016/j.optmat.2014.05.017
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发表时间：
2014-09
影响因子：
3.9
通讯作者：
M. Yamaga;Y. Masui;N. Kodama
中科院分区：
文献类型：
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作者：
M. Yamaga;Y. Masui;N. Kodama
Eu~(2+)掺杂Ba3SiO_5晶体的持久磷光衰减曲线与温度的关系表明，至少存在三个电子-空穴复合中心。从优势中心开始的衰变曲线分别表示为低于360K或高于360K的i(T)x=A(A/t)(−t/τ1)−exp(−t/τ0)ori(T)o=A/tn(n>t；1)。随着温度的升高，衰变曲线的积分强度急剧下降，这种温度行为与Ba3SiO5中Eu2+的本征发光非常相似，其短衰变时间小于2.7KμS，退激是通过多声子辅助的非辐射弛豫到Ba3SiO5中Eu2+的基态发生的。
Temperature dependence of decay curves of persistent phosphorescence in Eu2+-doped Ba3SiO5crystals indicates that there are, at least, three electron–hole recombination centers. The decay curve from the dominant center is represented byI(t) = (A/t)( exp(−t/τ1) − exp(−t/τ0)) orI(t) =A/tn(n >1) below or above 360 K, respectively. The integrated intensities of the decay curves decrease drastically in increasing temperature above 360 K. As such temperature behavior is very similar to that of the intrinsic Eu2+luminescence with short decay times of less than 2.7 μs in Ba3SiO5, the deexcitation occurs through thermally multi-phonon assisted nonradiative relaxation to the ground state of Eu2+in Ba3SiO5.