Structural and electric properties of AgGaTe2 layers prepared using mixed Source of Ag2Te and Ga2Te3
Structural and electric properties of AgGaTe2 layers prepared using mixed Source of Ag2Te and Ga2Te3
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使用 Ag2Te 和 Ga2Te3 混合源制备的 AgGaTe2 层的结构和电性能
DOI：
10.1002/pssa.201600284
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
and M. Kobayashi
中科院分区：
文献类型：
--
作者：
A. Uruno;and M. Kobayashi
采用Ag 2 Te和Ga 2 Te 3的混合粉末源，通过封闭空间升华法在Si衬底上制备了AgGaTe 2薄膜。引入Ag 2 Te缓冲层沉积以消除回熔蚀刻。研究了混合源中Ag 2 Te和Ga 2 Te 3的摩尔比对AgGaTe 2层结晶度的影响。发现该层的组成和相根据沉积物中的摩尔比而改变，这可以通过源摩尔比沿着Ag 2 Te缓冲层厚度来控制。结果表明，通过调整工艺参数，可以得到（112）取向的均匀AgGaTe 2薄膜，且AgGaTe 2与Si之间存在突变界面。所获得的层显示出约2.5 × 1016 cm-3的受体浓度。使用p-AgGaTe 2/n-Si异质结制造太阳能电池，并且显示出1.15%的转换效率。
AgGaTe2layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt‐back etching. The effect of the molar ratio of Ag2Te and Ga2Te3in the mixed source on the crystallinity of the AgGaTe2layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2layer with an abrupt interface between AgGaTe2and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016cm−3. A solar cell was fabricated using the p‐AgGaTe2/n‐Si heterojunction, and exhibited a conversion efficiency of 1.15%.