Fabrication process of field emitter arrays using focused ion and electron beam induced reaction
Fabrication process of field emitter arrays using focused ion and electron beam induced reaction
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使用聚焦离子和电子束诱导反应的场发射器阵列的制造过程
DOI：
10.1116/1.1349205
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发表时间：
2001
影响因子：
1.4
通讯作者：
S. Okuda
中科院分区：
文献类型：
--
作者：
C. Ochiai;O. Yavaş;M. Takai;A. Hosono;S. Okuda
用聚焦离子束和电子束组成的双束系统制作了金属门控铂场发射器阵列(FEA)。Nb或Au栅层中的栅开口是通过使用聚焦离子束进行物理溅射和随后对下面的二氧化硅层进行湿法刻蚀而产生的。利用电子束诱导的化学反应将铂针尖沉积到栅开口中，无需任何热退火过程即可产生场发射。在湿法刻蚀后，由于束流诱导的增强刻蚀，Nb栅场效应晶体管的栅极开度增大。相反，由于抑制了增强刻蚀，Au栅场效应晶体管的栅极开度较小。因此，通过对浇口金属材料的选择来控制浇口开口。随着栅极开口直径的减小，场发射的开启电压降低。
Metal-gated Pt field emitter arrays (FEAs) have been manufactured using a dual beam system consisting of focused ion and electron beams. The gate opening in Nb or Au gate layers was produced by physical sputtering using a focused ion beam and subsequent wet etching of the underlying silicon dioxide layer. Deposition of a platinum tip into the gate opening using electron-beam-induced chemical reaction resulted in field emission without any thermal annealing process. After wet etching an enlargement of the gate opening in Nb-gated FEAs was observed due to the beam-induced enhanced etching. In contrast, the smaller gate opening in Au-gated FEAs was easily fabricated because of the suppression of the enhanced etching. Consequently, the gate opening was controlled by selection of the gate metal material. The turn-on voltage for field emission decreased by decreasing the diameter of the gate opening.