Self-sensing micro- and nanocantilevers with attonewton-scale force resolution

Self-sensing micro- and nanocantilevers with attonewton-scale force resolution
复制标题

DOI:
10.1021/nl060275y
复制
发表时间:
2006-05-01
期刊:
影响因子:
10.8
通讯作者:
Roukes, M. L.
Roukes, M. L.
中科院分区:
材料科学1区
文献类型:
--
作者:
Arlett, J. L.;Maloney, J. R.;Roukes, M. L.

文献摘要

被引文献

相似文献

薄压阻硅悬臂梁被证明可以在集成、自感应、易于扩展的配置中为力检测提供前所未有的灵敏度。本文实现的器件是利用体微米和纳米加工工艺从单晶硅外延膜图案化的。我们证明了室温下的电转换力灵敏度为 235 aN/Hz(1/2),10 K 时的电转换力灵敏度为 17 aN/Hz(1/2)。在低温下观察到 p+ 压阻应变系数的增强。结果用于阐明利用基于半导体压敏电阻器的位移换能的自感知纳米机电系统可实现的最终低温灵敏度。
Thin, piezoresistive silicon cantilevers are shown to provide unprecedented sensitivity for force detection in an integrated, self-sensing, readily scalable configuration. The devices realized herein are patterned from single- crystal Si epilayer membranes utilizing bulk micro- and nanomachining processes. We demonstrate an electrically transduced force sensitivity of 235 aN/Hz(1/2) at room temperature and 17 aN/Hz(1/2) at 10 K. Enhancement of the p+ piezoresistive gauge factor is observed at cryogenic temperatures. The results are employed to elucidate the ultimate, low-temperature sensitivity attainable from self-sensing nanoelectromechanical systems utilizing displacement transduction based upon semiconducting piezoresistors.