Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process
Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process
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关注能量弛豫过程的Ge和Si纳米线准弹道空穴传输理论分析
DOI:
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发表时间:
2017
期刊:
影响因子:
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通讯作者:
and T. Kimoto
中科院分区:
文献类型:
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作者:
H. Tanaka;J. Suda;and T. Kimoto