Twenty-two percent efficiency HIT solar cell
Twenty-two percent efficiency HIT solar cell
复制标题
DOI：
10.1016/j.solmat.2008.02.037
复制
发表时间：
2009-06
影响因子：
6.9
通讯作者：
Y. Tsunomura;Y. Yoshimine;M. Taguchi;T. Baba;Toshihiro Kinoshita;H. Kanno;H. Sakata;E. Maruyama-
中科院分区：
文献类型：
--
作者：
Y. Tsunomura;Y. Yoshimine;M. Taguchi;T. Baba;Toshihiro Kinoshita;H. Kanno;H. Sakata;E. Maruyama-
我们已经实现了世界上最高的太阳能电池转换效率为22.3%（Voc：0.725V，Isc：3.909A，FF：0.791，总面积：100.5cm 2，由AIST确认），通过使用具有本征薄层（HIT）结构的异质结。这是世界上第一个实际尺寸（> 100 cm 2）的硅太阳能电池，转换效率超过22%的确认值。这种高效率主要是由于a-Si：H/c-Si异质界面特性和光学限制的改善而实现的。HIT结构的优异的a-Si：H/c-Si异质界面使得能够实现超过0.720V的高Vocof，并导致更好的温度特性。为了降低发电成本，我们正在研究多种技术，以进一步提高HIT太阳能电池的转换效率，特别是Voc，目标是到2010年在实验室中实现23%的效率。
We have achieved the world's highest solar cell conversion efficiency of 22.3% (Voc: 0.725V, Isc: 3.909A, FF: 0.791, total area: 100.5cm2, confirmed by AIST) by using a heterojunction with intrinsic thin layer (HIT) structure. This is the world's first practical-size (>100cm2) silicon solar cell that exceeds a conversion efficiency of 22% as a confirmed value. This high efficiency has been achieved mainly due to improvements in a-Si:H/c-Si hetero-interface properties and optical confinement. The excellent a-Si:H/c-Si hetero-interface of the HIT structure enables a high Vocof over 0.720V and results in better temperature properties. In order to reduce the power-generating cost, we are now investigating numerous technologies to further improve the conversion efficiency, especially the Voc, of HIT solar cells, with the aim of achieving 23% efficiency in the laboratory by 2010.