Daisuke NAGANO: "Electrical Properties and Crystal Structures of Semiconductive Nb-doped BaTiOィイD23ィエD2 Thin Film Prepared by MOCVD"Key Engineering Materials (Electroceramics in Japan I). 157-158. 167-174 (1999)

Daisuke NAGANO: "Electrical Properties and Crystal Structures of Semiconductive Nb-doped BaTiOィイD23ィエD2 Thin Film Prepared by MOCVD"Key Engineering Materials (Electroceramics in Japan I). 157-158. 167-174 (1999)
复制标题

Daisuke NAGANO:“MOCVD 制备的半导体 Nb 掺杂 BaTiO2 薄膜的电性能和晶体结构”关键工程材料(日本电陶瓷 I)167-174(1999)。

DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
--
中科院分区:
--
文献类型:
--
作者:

文献摘要

相似文献