Role of Cu film texture in grain growth correlated with twin boundary formation
Role of Cu film texture in grain growth correlated with twin boundary formation
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DOI：
10.1016/j.actamat.2011.10.028
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发表时间：
2012
期刊：
影响因子：
9.4
通讯作者：
K. Kohama;Kazuhiro Ito;T. Matsumoto;Y. Shirai;M. Murakami
中科院分区：
文献类型：
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作者：
K. Kohama;Kazuhiro Ito;T. Matsumoto;Y. Shirai;M. Murakami
为了了解铜膜织构在室温 (RT) 晶粒生长中与孪晶晶界形成相关的作用，将铜膜沉积在各种阻挡材料上，并通过 X 射线衍射研究铜膜织构。由于强 (111) 织构，Cu 晶粒在无势垒 SiO2/Si 基板上生长迅速，而在 Ta 势垒上则非常缓慢。在室温下保持~60天后，生长速率和平均晶粒直径在(200)Cupeak与(222)Cupeak面积比~1.0时最大，其中{111}、{100}和{511}晶粒共存。这种三种或更多种晶粒取向的共存对于促进 Cu 晶粒在室温下的生长至关重要。类似地，当促进 Cu 晶粒生长时，平均孪晶界 (TB) 密度最大。纳米铜晶粒中结核的形成不受晶粒尺寸控制，而是由晶粒生长引起。 TB 可能是由相对快速的晶粒生长过程中堆叠顺序不规则引起的退火孪晶。结论认为，Cu膜织构在沉积开始时就已确定，而Cu膜对各种阻挡材料的润湿性在决定膜织构方面起着关键作用。
To understand the role of Cu film texture in grain growth at room temperature (RT) in relation to twin boundary formation Cu films were deposited on various barrier materials and the Cu film texture was investigated by X-ray diffraction. Cu grain growth was rapid on a barrierless SiO2/Si substrate and very slow on a Ta barrier due to strong (111) texture. The growth rate and the average grain diameter after being kept at RT for up to ∼60days were maximum at a (200)Cupeak to (222)Cupeak area ratio of ∼1.0, where {111}, {100} and {511} grains coexisted. Such coexistence of three or more orientations of grains is essential in facilitating Cu grain growth at RT. Similarly, the average twin boundary (TB) density was maximum when Cu grain growth was facilitated. TB formation in nano-sized Cu grains was not controlled by grain size, but due to grain growth. The TB could be annealing twins caused by irregularities in the stacking sequence during relatively fast grain growth. The Cu film texture is concluded to be determined at the beginning of deposition, and the wettability of various barrier materials by the Cu films plays a key role in determining the film texture.