Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride
Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride
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DOI：
10.1039/c6ce02006b
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发表时间：
2017-01
期刊：
影响因子：
3.1
通讯作者：
Xiaochen Wang;T. Hooper;Amit Kumar;Isobel K. Priest;Yuewen Sheng;Thomas O. M. Samuels;Shanshan Wang;A. Robertson;M. Pacios;H. Bhaskaran;A. Weller;J. Warner
中科院分区：
文献类型：
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作者：
Xiaochen Wang;T. Hooper;Amit Kumar;Isobel K. Priest;Yuewen Sheng;Thomas O. M. Samuels;Shanshan Wang;A. Robertson;M. Pacios;H. Bhaskaran;A. Weller;J. Warner
我们探索使用稳定的，预先形成的，低聚氨基硼烷作为前体的化学气相沉积生长的几层六方氮化硼（h-BN）薄膜在大气压条件下的铜箔。将二聚二硼氮烷H3 B·NH 2BH 2·NH 3（DAB）和三聚三硼氮烷H3 B·（NH 2BH 2）2·NH 3（TAB）、氨硼烷的衍生物H3 B·NH 3（AB）与通常用于CVD生长h-BN的前体AB进行比较。DAB和TAB在生长h-BN少层膜方面显示出与AB相似的有效性。使用DAB代替AB作为前体导致在较短的时间段内完全连续的h-BN膜。h-BN膜的表面的分析揭示，DAB和TAB前体在其CVD生长期间在与使用AB时相同的时间段内在h-BN膜的表面上存款更多的纳米颗粒。这两种新的h-BN前体（DAB和TAB）的可行性为使用CVD技术生长宽带隙h-BN膜开辟了更广泛的固态来源。
We explore the use of stable, pre-formed, oligomeric aminoboranes as precursors for the chemical vapour deposition growth of few-layered hexagonal boron nitride (h-BN) films on Cu foils under atmospheric pressure conditions. Dimeric diborazane H3B·NH2BH2·NH3 (DAB), and trimeric triborazane H3B·(NH2BH2)2·NH3 (TAB), derivatives of ammonia borane, H3B·NH3 (AB), are compared with AB, a commonly used precursor for the CVD growth of h-BN. Both DAB and TAB show similar effectiveness to AB in growing h-BN few layered films. Using DAB as the precursor instead of AB leads to fully continuous h-BN films in a shorter period of time. Analysis of the surface of the h-BN films reveals that DAB and TAB precursors deposit more nanoparticles on the surface of the h-BN films during their CVD growth within the same time period as when using AB. The viability of these two new h-BN precursors (DAB and TAB), opens up a wider range of solid-state sources for growing wide band gap h-BN films using CVD techniques.