Polysynthetic Twinning in RbIn3S5
Polysynthetic Twinning in RbIn3S5
复制标题
RbIn3S5 中的多合成孪晶
DOI：
10.1006/jssc.2002.9645
复制
发表时间：
2002
影响因子：
5.4
通讯作者：
A. Simon
中科院分区：
文献类型：
--
作者：
L. Kienle;A. Simon
Abstract The real structure of the new ternary compound RbIn 3 S 5 is characterized by polysynthetic twinning of nanosized domains separated by coherent twin boundaries. Based on electron microscopy, a model of the structure at the twin interface is derived which allows a convincing simulation of experimental images. The details of twinning are described in a unified model. As a rule, a disordered arrangement of twin lamellas with a random distribution of their widths is observed with ordering of twin boundaries only in nanosized regions of the crystallites. For a minimal distance of the twin boundaries (back-to-back twinning) the close relationship between twinning and shearing is discussed. The distinction of these two cases is only possible by close inspection of the atomic structure at the boundaries. Twinning is not the only crystal defect in the structure of RbIn 3 S 5 . Variations in the connection of the characteristic structural units occur which lead to the formation of different real structures.
