Correlated few-electron states in vertical double-quantum-dot systems.

Correlated few-electron states in vertical double-quantum-dot systems.
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垂直双量子点系统中的相关少电子态。

DOI:
10.1103/physrevb.51.1769
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发表时间:
1994
期刊:
Physical review. B, Condensed matter
影响因子:
--
通讯作者:
P. Hawrylak
P. Hawrylak
中科院分区:
--
文献类型:
--
作者:
J. J. Palacios;P. Hawrylak

文献摘要

被引文献

相似文献

利用解析方法、组态相互作用方法和平均场方法研究了半导体、垂直双量子点系统的电子性质。强磁场、静电约束和点间耦合的综合作用诱导了一类新的少电子基态,这种基态在单量子点中是不存在的。特别是,所发挥的作用的同位旋(或量子点指数)在确定新的基态的出现进行了分析和比较所发挥的作用的标准自旋。
The electronic properties of semiconductor, vertical, double quantum dot systems with few electrons are investigated by means of analytic, configuration-interaction, and mean-field methods. The combined effect of a high magnetic field, electrostatic confinement, and inter-dot coupling, induces a new class of few-electron ground states absent in single quantum dots. In particular, the role played by the isospin (or quantum dot index) in determining the appearance of new ground states is analyzed and compared with the role played by the standard spin.