Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate
Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate
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DOI：
10.1116/1.4927367
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发表时间：
2015-09-01
影响因子：
1.4
通讯作者：
Koo, Kyung-Wan
中科院分区：
文献类型：
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作者：
Jung, Soon-Won;Koo, Jae Bon;Koo, Kyung-Wan
作者展示了弹性体基板上具有有机铁电聚合物聚（偏二氟乙烯-三氟乙烯）和非晶氧化物半导体氧化铟镓锌通道的柔性存储薄膜晶体管（MTFT）。柔性MTFT的载流子迁移率、存储器开/关比和亚阈值摆幅分别为21 cm(2)V(-1)s(-1)、10(7)和0.5-1V/decade。对于没有任何接口层的器件，已确认在 +/- 20V 编程时内存窗口为 13V。当基板以10mm的曲率半径弯曲时，这些获得的值没有显着变化。内存开/关比率最初为 5 x 10(4)，即使在 3600 秒后仍保持在 10(2)。所制造的 MTFT 在弹性体上表现出令人鼓舞的特性，足以实现机械柔性非易失性存储器件。 (C) 2015 年美国真空协会。
The authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21 cm(2)V(-1)s(-1), 10(7), and 0.5-1V/decade, respectively. The memory window of 13V at +/- 20V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10mm. The memory on/off ratio was initially 5 x 10(4) and maintained at 10(2) even after a lapse of 3600 s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices. (C) 2015 American Vacuum Society.