Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer
Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer
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DOI：
10.1021/jp809359v
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发表时间：
2008-12
影响因子：
3.7
通讯作者：
Yajun Yang;G. Meng;Xianyun Liu;Lide Zhang;Zheng Hu;Chengyu He;Ye-min Hu
中科院分区：
文献类型：
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作者：
Yajun Yang;G. Meng;Xianyun Liu;Lide Zhang;Zheng Hu;Chengyu He;Ye-min Hu
通过原位碳化排列在硅衬底上的硅纳米线阵列，在硅衬底上实现了高度定向的碳化硅多孔纳米线（NW）阵列。所得的 SiC 纳米线阵列继承了母体硅纳米线阵列的直径和长度。场发射测量表明，这些定向 SiC 多孔纳米线阵列是优异的场发射体，在非常低的电场下具有大的场发射电流密度。本文报道的原位转换方法可用于制造其他含硅材料的纳米线阵列。
Highly oriented SiC porous nanowire (NW) arrays on Si substrate have been achieved via in situ carbonizing aligned Si NW arrays standing on Si substrate. The resultant SiC NW arrays inherit the diameter and length of the mother Si NW arrays. Field emission measurements show that these oriented SiC porous NW arrays are excellent field emitter with large field emission current denstity at very low electric field. The in situ conversion method reported here might be exploited to fabricate NW arrays of other materials containing silicon.