Architecture, microstructure and Jc anisotropy of highly oriented biaxially textured Co-doped BaFe2As2 on Fe/IBAD-MgO-buffered metal tapes
Architecture, microstructure and Jc anisotropy of highly oriented biaxially textured Co-doped BaFe2As2 on Fe/IBAD-MgO-buffered metal tapes
复制标题
DOI：
10.1088/0953-2048/25/8/084019
复制
发表时间：
2012-08-01
影响因子：
3.6
通讯作者：
Holzapfel, B.
中科院分区：
文献类型：
--
作者：
Trommler, S.;Haenisch, J.;Holzapfel, B.
优化，双轴织构BaFe1.8Co0.2As2薄膜与1.7度的面内对准已实现高品质的IBAD织构MgO涂层的技术基板上，利用额外的Fe缓冲层。实现了高临界电流密度（J（c）），与单晶MgO上的膜相当（在4 K，自场下J（c）>= 1 MA cm（-2））。透射电子显微镜的调查揭示了少量的c轴相关的缺陷引入的MgO模板。这些缺陷对J（c）各向异性的影响，确定在角度依赖的电子输运测量。
Optimized, biaxially textured BaFe1.8Co0.2As2 thin films with an in-plane alignment of 1.7 degrees have been realized on high-quality IBAD-textured MgO-coated technical substrates utilizing additional Fe buffer layers. High critical current densities (J(c)) were achieved, comparable to films on single crystalline MgO (J(c) >= 1 MA cm(-2) at 4 K, self-field). Transmission electron microscopy investigations reveal a small number of c-axis correlated defects introduced by the MgO template. The effect of these defects on the J(c) anisotropy was determined in angular-dependent electronic transport measurements.