Intrinsic limits on electron mobility in dilute nitride semiconductors
Intrinsic limits on electron mobility in dilute nitride semiconductors
复制标题
稀氮化物半导体中电子迁移率的内在限制
DOI：
10.1063/1.1622444
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发表时间：
2003
影响因子：
4
通讯作者：
E. O’Reilly
中科院分区：
文献类型：
--
作者：
S. Fahy;E. O’Reilly
一个基本的连接之间的组成依赖的导带边缘能量和n型载流子散射截面的超稀限制半导体合金，施加一般限制在这样的合金中的载流子迁移率。根据测量的GaAs 1-xNx中带隙的氮组成依赖性，估计GaAs中替代氮缺陷的载流子散射截面为0.3nm 2。在一个独立的散射近似，载流子迁移率估计为1000 cm 2/V s的氮原子浓度为1%，相当于在高品质的GaInNAs样品在这些N浓度的最高测量迁移率，但大大高于在许多样品中发现的。 这给出了这些材料中载流子迁移率的固有上限。
A fundamental connection is established between the composition-dependence of the conduction band edge energy and the n-type carrier scattering cross section in the ultradilute limit for semiconductor alloys, imposing general limits on the carrier mobility in such alloys. From the measured nitrogen composition dependence of the bandgap in GaAs1−xNx, the carrier scattering cross section of substitutional nitrogen defects in GaAs is estimated to be 0.3 nm2. Within an independent scattering approximation, the carrier mobility is then estimated to be ∼1000 cm2/V s for a nitrogen atomic concentration of 1%, comparable to the highest measured mobility in high-quality GaInNAs samples at these N concentrations, but substantially higher than that found in many samples. This gives an intrinsic upper bound on the carrier mobility in these materials.