On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification
On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification
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DOI:
10.1016/j.jcrysgro.2015.02.024
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发表时间:
2015-05
影响因子:
1.8
通讯作者:
Thècle Riberi-Béridot;N. Mangelinck-Noël;A. Tandjaoui;G. Reinhart;B. Billia;T. Lafford;J. Baruchel;L. Barrallier
中科院分区:
文献类型:
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作者:
Thècle Riberi-Béridot;N. Mangelinck-Noël;A. Tandjaoui;G. Reinhart;B. Billia;T. Lafford;J. Baruchel;L. Barrallier
Grain orientation and competition during growth has been analyzed in directionally solidified multicrystalline silicon samples. In situ and real-time characterization of the evolution of the grain structure during growth has been performed using synchrotron X-ray imaging techniques (radiography and topography). In addition, Electron Backscattered Diffraction has been used to reveal the crystalline orientations of the grains and the twin relationships. New grains formed during growth have two main origins: random nucleation and twinning. It is demonstrated that the solidified samples are dominated by