Improvement of the thermoelectric performance of InSe-based alloys doped with Sn
Improvement of the thermoelectric performance of InSe-based alloys doped with Sn
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Sn掺杂InSe基合金热电性能的改善
DOI：
10.1039/c5ra23023c
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发表时间：
2015-01-01
期刊：
影响因子：
3.9
通讯作者：
Cui, Jiaolin
中科院分区：
文献类型：
--
作者：
Hou, Xiaojing;Chen, Shaoping;Cui, Jiaolin
在这里，我们介绍了InSe基合金InSeSnx(x=0-0.02)，由于锡在晶格上的优先占据，InSeSnx的热电性能得到了改善。这一改进归因于载流子浓度(N)的提高和晶格热导率的降低(kappa(L))。然而，由于在带隙中间存在中间带，作为电子和空穴的湮没中心，对n的增强是有限的。KL的降低是由于新产生的缺陷SnIn(+)上的声子散射增加所致。结果表明，在x=0.01@830K时，我们得到了最大的ZT值为0.23，约为原始晶体的2.9倍。
Here we present InSe-based alloys InSeSnx (x = 0-0.02) with improved thermoelectric performance upon Sn's preferential occupation on In lattice sites. This improvement is attributed to the enhancement in carrier concentration (n) and reduction in lattice thermal conductivity (kappa(L)). However, the enhancement in n is limited due to the presence of the intermediate band in the middle of the bandgap, which acts as an annihilation center for electrons and holes. The reduction in kL is caused by increased phonon scattering on the newly-created defect Sn-In(+). As a result, we attain the highest ZT value of 0.23 at x = 0.01@830 K, which is about 2.9 times that of virgin InSe.