Structural and electrical characteristics of chemical-solution-derived (Bi,La)4Ti3O12 thin films with various Bi2O3 template layers
Structural and electrical characteristics of chemical-solution-derived (Bi,La)4Ti3O12 thin films with various Bi2O3 template layers
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DOI：
10.1063/1.1524708
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发表时间：
2003
影响因子：
3.2
通讯作者：
D. Bao;T. Chiu;N. Wakiya;K. Shinozaki;N. Mizutani
中科院分区：
文献类型：
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作者：
D. Bao;T. Chiu;N. Wakiya;K. Shinozaki;N. Mizutani
采用化学溶液沉积法在Pt/Ti/SiO2/Si衬底上制备了不同Bi 2 O3模板层的（Bi，La）4 Ti 3 O 12（BLT）铁电薄膜。具有薄Bi 2 O3底层和具有薄Bi 2 O3中间层的BLT膜在750 °C退火后具有（117）择优取向生长，而具有薄Bi 2 O3上层和没有Bi 2 O3模板层的BLT膜表现出高c轴取向。表面形貌随择优取向的不同而变化。电学性能测试表明，Bi 2 O3模板层的使用显著改善了BLT薄膜的P-E磁滞回线。在750 °C下退火的无Bi_2O_3模板层、有Bi_2O_3上层、有Bi_2O_3底层和有Bi_2O_3中间层的BLT膜的反射极化（2 Pr）和矫顽场（Ec）值分别为10.8、29.12、26.17和19.67 μC/cm ~ 2; 79.0、74.5、75.5和76.3 kV/cm。迪...
Ferroelectric (Bi,La)4Ti3O12 (BLT) thin films with different Bi2O3 template layers were prepared on Pt/Ti/SiO2/Si substrates by a chemical-solution deposition method. The BLT films with a thin Bi2O3 bottom layer and those with a thin Bi2O3 intermediate layer had a (117) preferentially oriented growth after annealing at 750 °C, while those with a thin Bi2O3 upper layer and those without a Bi2O3 template layer exhibited a high c-axis orientation. The surface morphologies changed with different preferential orientations. The electrical measurements showed that the use of Bi2O3 template layers improved significantly the P–E hysteresis loops of BLT thin films. The remanent polarization (2Pr) and coercive field (Ec) values of BLT films without a Bi2O3 template layer, with a Bi2O3 upper layer, with a Bi2O3 bottom layer, and with a Bi2O3 intermediate layer annealed at 750 °C were 10.8, 29.12, 26.17, and 19.67 μC/cm2; 79.0, 74.5, 75.5, and 76.3 kV/cm, respectively, at an applied electric field of 350 kV/cm. The di...