Repulsive Casimir effect with Chern insulators.
Repulsive Casimir effect with Chern insulators.
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DOI：
10.1103/physrevlett.112.056804
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发表时间：
2013-10
影响因子：
8.6
通讯作者：
P. Rodriguez-Lopez;A. Grushin
中科院分区：
文献类型：
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作者：
P. Rodriguez-Lopez;A. Grushin
我们从理论上预测，当表征两个陈氏绝缘板的陈氏数符号相反(相等)时，两个陈氏绝缘板之间的真空中的卡西米尔力在很远的距离上是排斥的(吸引的)。该系统的一个独特之处在于，可以通过简单地翻转其中一个极板或通过静电掺杂来调整力的符号。我们计算并考虑了平板的全部光学响应，认为这种排斥是这些系统的普遍现象，因为它依赖于量子化的零频率霍尔电导。我们证明了用最近发现的具有量子化霍尔电导的陈氏绝缘体的掺铬(Bi，Sb)_2Te_3薄膜实现排斥是可能的。
We theoretically predict that the Casimir force in vacuum between two Chern insulator plates can be repulsive (attractive) at long distances whenever the sign of the Chern numbers characterizing the two plates are opposite (equal). A unique feature of this system is that the sign of the force can be tuned simply by turning over one of the plates or alternatively by electrostatic doping. We calculate and take into account the full optical response of the plates and argue that such repulsion is a general phenomena for these systems as it relies on the quantized zero frequency Hall conductivity. We show that achieving repulsion is possible with thin films of Cr-doped (Bi,Sb)2Te3, that were recently discovered to be Chern insulators with quantized Hall conductivity.