Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2
Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2
复制标题
DOI：
10.1063/1.4915307
复制
发表时间：
2015-03-16
影响因子：
4
通讯作者：
Zacharias, Margit
中科院分区：
文献类型：
--
作者：
Gutsch, Sebastian;Laube, Jan;Zacharias, Margit
我们研究了磷掺杂的Si纳米晶/SiO2超晶格的电子特性，并通过瞬态电流分析确定载流子浓度。这是通过将多层封装在两个电绝缘层之间并通过定义的层到层分离来控制载流子迁移率来实现的。观察到电压依赖性电离载流子密度的饱和，这表明完全取代掺杂离子电离，并允许计算掺杂诱导电荷载流子密度。研究发现，在全电离状态下，超晶格的掺杂效率仅为0.12%，这就解释了掺杂对输运特性影响异常小的原因。(C) 2015 AIP出版有限责任公司
We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics. (C) 2015 AIP Publishing LLC.