Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
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Si(100)上分子束外延生长GaAs的初始阶段和畴结构
DOI：
10.1143/jjap.26.l114
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
H. Takasugi
中科院分区：
文献类型：
--
作者：
M. Kawabe;T. Ueda;H. Takasugi
用RHEED和俄歇电子能谱研究了在Si(100)衬底上外延生长的初始阶段。在AS4助熔剂作用下，Si表面覆盖了一层或两层稳定到700°C的As单层，而在500℃下，Ga-Si表面也发生了脱附。根据暴露在AS4助熔剂中的温度不同，有两种不同的Si-As重构。当硅衬底有2×1重构时，高温(>；600℃)和低温(<；450℃)分别为1×2和2×1。在Si(100)-As1×2和Si(100)-As2×1衬底上生长的GaAs的表面重构相互垂直，这表明不同的生长温度，GaAs到Si衬底的磁畴方向是不同的。
The initial stage of GaAs epitaxial growth on Si(100) has been studied by RHEED and AES. On exposure to a As4 flux, the Si surface is covered with one or two monolayers of As which are stable up to 700°C, while Ga on Si desorbs even at 500°C. There are two kinds of Si-As reconstruction, which depend on the temperature of Si exposed to As4 flux. One is 1×2 for high temperature (>600°C) and the other is 2×1 for low temperature (<450°C) when the Si substrate has 2×1 reconstruction. The surface reconstructions of GaAs grown on Si(100)-As 1×2 and Si(100)-As 2×1 are perpendicular to each other, which indicates that the domain direction of GaAs to Si substrate is different depending on the initial growth temperature.