A study on Si/Al2O3 paramagnetic point defects
A study on Si/Al2O3 paramagnetic point defects
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DOI：
10.1063/1.4967919
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发表时间：
2016-11
影响因子：
3.2
通讯作者：
S. Kühnhold-Pospischil;P. Saint‐Cast;M. Hofmann;S. Weber;P. Jakes;R. Eichel;J. Granwehr
中科院分区：
文献类型：
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作者：
S. Kühnhold-Pospischil;P. Saint‐Cast;M. Hofmann;S. Weber;P. Jakes;R. Eichel;J. Granwehr
在这一贡献中，测量了与Si/Al_2O_3界面有关的负电荷和电子陷阱，并与顺磁点缺陷和分子振动有关。为此，进行了非接触式电容电压测量、X波段电子顺磁共振(EPR)和红外光谱，并对它们的结果进行了比较。通过添加不同厚度的热生长的SiO_2层并进行额外的温度处理，改变了Si/Al_2O_3界面的负电荷密度和电子陷阱密度。用电子顺磁共振仪在Si/(SiO_2)/Al_2O_3样品中测得5个顺磁矩，g1=2.0081±0.0002，g2=2.0054±0.0002，g3=2.0003±0.0002，g4=2.0026±0.0002，g5=2.0029±0.0002。Al_2O_3层厚度的变化表明，与G_1、G_2和G_3共生的顺磁物种位于Si/Al_2O_3界面，而与G_4和G_5共生的顺磁物种位于Si/Al_2O_3界面。
In this contribution, negative charges and electronic traps related to the Si / Al 2 O 3 interface were measured and related to paramagnetic point defects and molecular vibrations. To this end, contactless capacitance voltage measurements, X-band electron paramagnetic resonance (EPR), and infrared spectroscopy were carried out, and their results were compared. A change in the negative charge density and electron trap density at the Si / Al 2 O 3 interface was achieved by adding a thermally grown SiO 2 layer with varying thicknesses and conducting an additional temperature treatment. Using EPR, five paramagnetic moments were detected in Si / ( SiO 2 ) / Al 2 O 3 samples with g values of g 1 = 2.0081 ± 0.0002 , g 2 = 2.0054 ± 0.0002 , g 3 = 2.0003 ± 0.0002 , g 4 = 2.0026 ± 0.0002, and g 5 = 2.0029 ± 0.0002. Variation of the Al 2 O 3 layer thickness shows that paramagnetic species associated with g1, g2, and g3 are located at the Si / Al 2 O 3 interface, and those with g4 and g5 are located within the ...