RIGOROUS THERMODYNAMIC TREATMENT OF HEAT-GENERATION AND CONDUCTION IN SEMICONDUCTOR-DEVICE MODELING
RIGOROUS THERMODYNAMIC TREATMENT OF HEAT-GENERATION AND CONDUCTION IN SEMICONDUCTOR-DEVICE MODELING
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DOI：
10.1109/43.62751
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发表时间：
1990-11-01
影响因子：
2.9
通讯作者：
WACHUTKA, GK
中科院分区：
文献类型：
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作者：
WACHUTKA, GK
提出了一种解决自热问题的方法。它基于唯象不可逆热力学定律(例如，Onsager关系和总能量守恒)，也与通常在等温漂移扩散近似中考虑的物理模型一致。将经典的等温器件方程扩展为包含热源和热汇的广义热传导方程，除焦耳和汤姆逊热外，该方程还反映了通过复合(辐射和非辐射)和光学产生所交换的能量。因此，扩展模型也适用于直接半导体(例如，光电子器件)，并考虑了环境光强度引起的影响。由于理论中适当地考虑了施主和受主的不完全电离(杂质冻结)的情况，它完全考虑到了低温。与前人的工作进行了比较，结果表明，在稳态情况下，某些发热量、导热系数和热容的启发式模型确实可以在1-10%的误差范围内逼近正确的结果。然而，在瞬变区，以前使用的模型似乎没有一个是可靠的，特别是如果获得了短的开关时间(<；10 ns)，并且发现了高电流密度和陡峭的温度梯度。
A treatment of the self-heating problem is presented. It is based on the laws of phenomenological irreversible thermodynamics (e.g. Onsager's relations and conservation of total energy) and is also consistent with the physical models usually considered in the isothermal drift diffusion approximation. The classical isothermal device equations are extended and completed by a generalized heat-conduction equation involving heat sources and sinks which, besides Joule and Thomson heat, reflect the energy exchanged through recombination (radiative and nonradiative) and optical generation. Thus the extended model also applies to direct semiconductors (e.g., optoelectronic devices) and accounts for effects caused by the ambient light intensity. It fully allows for low temperature since the case of incomplete ionization of donors and acceptors (impurity freeze-out) is properly incorporated in the theory. A critical comparison with previous work is made, showing that, in the steady state, some of the heuristic models of heat generation, thermal conductivity, and heat capacity could indeed approximate the correct results within an error bound of 1-10%. In the transient regime, however, none of the models used previously seems to be reliable, particularly, if short switching times (<10 ns) are attained and high current densities and steep temperature gradients are found.< >