Hole Carriers Doping Effect on the Metal–Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films
Hole Carriers Doping Effect on the Metal–Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films
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DOI：
10.1021/jp502000s
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发表时间：
2014-06
影响因子：
3.7
通讯作者：
Wenhua Zhang;Kai Wang;L. Fan;Lingyun Liu;Panpan Guo;C. Zou;Jiaou Wang;H. Qian;K. Ibrahim;Wensheng Yan;F. Xu;Ziyu Wu
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文献类型：
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作者：
Wenhua Zhang;Kai Wang;L. Fan;Lingyun Liu;Panpan Guo;C. Zou;Jiaou Wang;H. Qian;K. Ibrahim;Wensheng Yan;F. Xu;Ziyu Wu
掺杂载流子与晶格的耦合是调节 VO2 相变行为的有效途径。在目前的工作中，掺氮的VO2样品是通过低能N-2(+)离子溅射结晶VO2薄膜来制备的。对于 VO1.9N0.1 和 VO1.87N0.13 样品，观察到金属-绝缘体转变 (MIT) 过程的临界温度 (T-c) 降低了大约 18 摄氏度。通过 X 射线吸附近边结构 (XANES) 光谱和光子电子光谱 (SRPES) 的电子结构表征揭示了氮掺入对 MIT 凹陷的影响。注入的氮原子被确定为与氧原子取代位置上的V4+离子配位。 p型掺杂剂将空穴载流子提供到d（平行）子带中，导致V-V二聚体内的相互作用减弱，并且M1相的能带隙变窄。这两方面都一致促进了掺氮 VO2 中 MIT 温度的降低。
The coupling of doped charge carriers with the crystal lattice is an efficient route to modulate the phase transition behavior of VO2. In the current work, the N-incorporated VO2 samples are prepared through the low-energy N-2(+) ion sputtering of the crystalline VO2 films. The critical temperatures (T-c) of the metal-insulator transition (MIT) process are observed to decrease with a value of similar to 18 degrees C for VO1.9N0.1 and VO1.87N0.13 samples. The effects of nitrogen incorporation on the MIT depression have been revealed by the electronic structural characterizations via the X-ray adsorption near-edge structure (XANES) spectroscopy and photon electronic spectroscopy (SRPES). The implanted nitrogen atoms are identified to coordinate with the V4+ ions at the substituent position of oxygen atoms. The p-type dopant provides the hole carriers into the d(parallel to) sub-bands, resulting in the attenuation of the interaction within V-V dimer and the narrowing of the energy band gap in M1 phase. Both aspects unanimously facilitate the depression of the MIT temperature in N-incorporated VO2.