On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy
On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy
复制标题
电容瞬态光谱法测定半导体薄膜深部中心的空间分布
DOI：
10.1063/1.330683
复制
发表时间：
1982
影响因子：
3.2
通讯作者：
M. Watanabe
中科院分区：
文献类型：
--
作者：
Y. Zohta;M. Watanabe
本文指出，用电容瞬态实验测量深能级浓度时，普遍采用的简单公式可能会产生严重的误差。基于空间电荷分析，推导了修正公式。
It is pointed out that a widely used simple formula may give rise to serious errors in profiling deep level concentrations from capacitance transient experiments. A correction formula is derived based on the space‐charge analysis.