Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
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具有应变 In0.8Ga0.2As 阱和 AlAs 势垒的 InP 基谐振隧道二极管的金属有机气相外延生长
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发表时间：
2005
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影响因子：
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通讯作者：
Takashi Kobayashi
中科院分区：
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作者：
H. Sugiyama;H. Matsuzaki;Y. Oda;H. Yokoyama;T. Enoki;Takashi Kobayashi
通过金属有机气相外延 (MOVPE) 生长具有应变 In0.8Ga0.2As 阱和 AlAs 势垒的 InP 基谐振隧道二极管 (RTD)。横截面透射电子显微镜 (TEM) 证实了超薄应变 AlAs 势垒和 In0.8Ga0.2As 阱的成功形成。原子力显微镜 (AFM) 观察揭示了 RTD 双势垒 (DB) 结构中原子平坦的界面。我们在势垒厚度 (Lb) 约为 6 个单层 (ML) 的 RTD 中同时获得了 1.46×105 A/cm2 的峰值电流密度 (jP)、7.7 的高峰谷电流比 (PVR) 和 0.43 V 的低峰值电压 (VP)。 Lb 约为 4 ML 的 RTD 中的最大 jP 超过 4×105 A/cm2。 AlAs 势垒厚度由 Al 前体供应持续时间精确控制。这些结果表明 MOVPE 在具有 RTD 和其他器件的高速 InP 基集成电路中的实际应用潜力。
InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organic vapor-phase epitaxy (MOVPE). Cross-sectional transmission electron microscopy (TEM) confirmed the successful formation of ultra-thin strained AlAs barriers and In0.8Ga0.2As wells. Atomic force microscope (AFM) observation revealed atomically flat interfaces in the double-barrier (DB) structures of the RTDs. We obtained a peak current density ( jP) of 1.46×105 A/cm2, high peak-to-valley current ratio (PVR) of 7.7, and a low peak voltage (VP) of 0.43 V simultaneously in the RTDs with the barrier thickness (Lb) of about 6 monolayers (MLs). Maximum jP exceeded 4×105 A/cm2 in the RTDs with Lb of about 4 MLs. The AlAs barrier thickness was precisely controlled by the Al-precursor-supply duration. These results indicate the potential of the practical use of MOVPE for high-speed InP-based integrated circuits with RTDs and other devices.