ORIGIN OF THE V = 1/2 FRACTIONAL QUANTUM HALL STATE IN WIDE SINGLE QUANTUM-WELLS
ORIGIN OF THE V = 1/2 FRACTIONAL QUANTUM HALL STATE IN WIDE SINGLE QUANTUM-WELLS
复制标题
DOI：
10.1103/physrevlett.72.3405
复制
发表时间：
1994-05-23
影响因子：
8.6
通讯作者：
SHAYEGAN, M
中科院分区：
文献类型：
--
作者：
SUEN, YW;MANOHARAN, HC;SHAYEGAN, M
我们研究了子带能量分离和不对称性对宽单量子阱中 nu = 1/2 和共存分数量子霍尔 (FQH) 态的准粒子激发间隙的影响。观察到 nu = 3/2 处的新偶分母 FQH 状态以及 nu = 2/3 处从一分量 FQH 状态到二分量 FQH 状态的戏剧性子带混合驱动相变。我们的结果揭示了 nu = 1/2 FQH 态的二元起源，并使我们能够构建半填充电子态的实验相图。
We study the effect of subband energy separation and asymmetry on the quasiparticle excitation gaps of the nu = 1/2 and coexisting fractional quantum Hall (FQH) states in wide single quantum wells. A new even-denominator FQH state at nu = 3/2 and a dramatic subband-mixing-driven phase transition from a one- to two-component FQH state at nu = 2/3 are observed. Our results reveal the two-component origin of the nu = 1/2 FQH state, and allow us to construct an experimental phase diagram for electron states at half filling.