TEM characterization of La/B4C multilayer systems by the geometric phase method
TEM characterization of La/B4C multilayer systems by the geometric phase method
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DOI：
10.1002/pssa.200521039
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发表时间：
2005-09-01
影响因子：
2
通讯作者：
Zwicker, G
中科院分区：
文献类型：
--
作者：
Häussler, D;Spiecker, E;Zwicker, G
层厚度在纳米范围内的新型 La/B4C 多层系统已通过磁控溅射沉积到结构化硅 (001) 表面上，并通过透射电子显微镜 (TEM) 进行了表征。通过应用最初开发用于测量高分辨率 TEM 图像位移场的几何相位方法，我们证明可以从横截面样本的明场 TEM 图像中高灵敏度地分析多层结构的完美性，尤其是局部层周期和局部层方向。这些结构参数的确定与先进 X 射线光学元件中此类多层系统的反射率特性的评估相关。 (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
New La/B4C multilayer systems with layer thicknesses in the nanometer range have been deposited onto structured silicon (001) surfaces by magnetron sputtering and have been characterized by transmission electron microscopy (TEM). By applying a geometric phase method which has been originally developed for measuring displacement fields from high-resolution TEM images, we demonstrate that the structural perfection of multilayers, especially their local layer periods and local layer orientations, can be analyzed with high sensitivity from bright-field TEM images of cross-section specimens. The determination of these structure parameters is relevant for the assessment of the reflectivity properties of such multilayer systems in advanced X-ray optical components. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.