Reduction of the Parasitic Couplings in the EMI Filters to Improve the High Frequency Insertion Loss
Reduction of the Parasitic Couplings in the EMI Filters to Improve the High Frequency Insertion Loss
复制标题
减少 EMI 滤波器中的寄生耦合以改善高频插入损耗
DOI：
10.1109/iecon.2018.8591234
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
N. Idir
中科院分区：
文献类型：
--
作者：
C. Cuellar;N. Idir
基于宽禁带半导体（GaN和SiC）的高开关频率静态变换器的发展要求航空应用中具有高性能的EMI滤波器。众所周知，无源元件之间的高频寄生耦合对EMI滤波器衰减具有负面影响。本文分析了减小元器件间和元器件与PCB间寄生耦合的方法，以提高EMI滤波器在高频（10MHz以上）的衰减。由于这些高频耦合的仿真复杂性，所提出的方法主要是基于实验的方法。所得到的结果证明了所提出的方法的有效性，以提高EMI滤波器的衰减高达100 MHz。
The development of the high switching frequency static converters based on Wide-Bandgap Semiconductors (GaN and SiC) requires EMI filters with high-performance for aeronautic applications. It is well known that the high frequency parasitic couplings between passive components have a negative impact on EMI filter attenuation. In this paper, the method of reduction in parasitic couplings between component-component and component-PCB is analyzed in order to increase the EMI filter attenuation at high frequency (beyond 10MHz). Because of simulation complexity of these high frequency couplings, the proposed method is based mainly on experimental approach. The obtained results put in evidence the effectiveness of the proposed method to improve EMI filter attenuation up to 100MHz.