Semiconducting properties of CoO thin films
Semiconducting properties of CoO thin films
复制标题
CoO薄膜的半导体特性
DOI：
--
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
C. Sorrell
中科院分区：
文献类型：
--
作者：
K. Kowalski;M. Ijjaali;T. Bak;B. Dupré;C. Gleitzer;J. Nowotny;M. Rȩkas;C. Sorrell
本文报道了在0.375 - 7.95 μm范围内不同厚度的CoO薄膜的电学性质。电导率和热电势都是在高温（1223 - 1423 K）和受控氧分压（5 - 2.1x104 Pa）下测量的。结果发现，在低p（O2）的电导率随膜厚度。空气中的电导率（Ea）的激活能随着氧化物厚度的增加而降低，从0.375 µm时的0.56 eV降低到大量CoO时的0.52 eV，而在低p（O2）=5 Pa时，Ea与厚度无关（Ea = 0.46 eV）。在1223 K - 1373 K范围内，电导率（nδ）的p（O2）指数的倒数对于7.95 μm膜接近4，对于0.375 μm膜约为3.5-3.7。CoO薄膜的电性能被认为是假设不同的缺陷结构中的体相和表面层。
This paper reports electrical properties of CoO thin films of different thickness in the range 0.375 – 7.95 µm. Both electrical conductivity and thermopower were measured at elevated temperatures (1223 – 1423 K) and under controlled oxygen partial pressure (5 − 2.1x104 Pa). It was found that at low p(O2) the electrical conductivity decreases with film thickness. The activation energy of the electrical conductivity (Ea) in air decreases with the oxide thickness from 0.56 eV at 0.375 µm to 0.52 eV for massive CoO while at low p(O2)=5 Pa the Ea is independent of the thickness (Ea = 0.46 eV). The reciprocal of the p(O2) exponent of the electrical conductivity (nδ) in the range 1223 K – 1373 K is close to four for the 7,95 µm film and is about 3.5–3.7 for the 0.375 µm film. The electrical properties of the CoO thin films are considered assuming different defect structures in the bulk phase and the surface layer.