The comparison of Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices as rectifier for a wide range temperature
The comparison of Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices as rectifier for a wide range temperature
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Co/苏木精/n-Si 和 Co/苏木精/p-Si 器件作为宽温度范围整流器的比较
DOI：
10.1016/j.mssp.2020.105039
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Ş. Aydoğan
中科院分区：
文献类型：
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作者：
M. Yilmaz;A. Koçyiğit;Burcu Bozkurt Çırak;H. Kaçuş;Ü. Incekara;Ş. Aydoğan
我们采用苏木精作为该型和p型硅衬底与钴（Co）金属触点之间的界面层，通过电流-电压（I-V）特性获得并比较了Co/苏木精/n-Si和Co/苏木精/p-Si器件在宽温度范围内的性能。利用x射线衍射仪（XRD）和扫描电镜（SEM）研究了苏木精薄膜的结构和形态特性。通过间隔20 K的i - v测量，温度范围从100 K变化到460 K。Co/苏木精/n-Si和Co/苏木精/p-Si器件在低温下表现出优异的整流性能，但在±1 V偏置下，整流比（RR）值随温度升高而降低。此外，该器件表现出热传感器或探测器的行为，因为在反向偏置下，电流值随着温度的升高而增加。随着电压的增加，Co/苏木精/p-Si器件在反向偏置下的稳定性优于Co/苏木精/n-Si器件。此外，从它们的i - v测量中提取了二极管的势垒高度、理想因数和串联电阻等参数以及界面态密度，并对热离子发射理论、Norde和张方法等各种技术进行了详细的比较。两种器件的二极管参数都受到温度变化的影响。Co/苏木精/n-Si和Co/苏木精/p-Si器件是整流和热传感应用的良好候选器件。
We employed hematoxylin as interfacial layer between then- andp-type silicon substrate and cobalt (Co) metallic contact to obtain and compare Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices for a wide range temperature via current-voltage (I–V) characteristics. Furthermore, we studied structural and morphological properties of the hematoxylin thin film by x-ray diffractometer (XRD) and scanning electron microscope (SEM). The temperature range was changed from 100 K to 460 K via 20 K interval forI–Vmeasurements. The Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices exhibited excellent rectifying behaviors for low temperatures, but rectifying ratio (RR) values decreased with increasing temperature at ±1 V bias. In addition, the devices showed thermal sensor or detector behavior because current values increased with increasing temperature at reverse biases. The Co/hematoxylin/p-Si device has better stability than Co/hematoxylin/n-Si device at reverse biases for the same temperature values according to stop leakage current with increasing voltage. In addition, the diode parameters such as barrier height, ideality factor and series resistance as well as interface states density were extracted from theI–Vmeasurements and compared in details for various techniques such as thermionic emission theory, Norde and Cheung methods. The diode parameters of the both devices were affected from the temperature changes. The Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices are good candidate for rectifying and thermal sensing applications.